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LEON-G100/G200 - System Integration Manual

GSM.G1-HW-09002-C Preliminary System description

Page 19 of 75

Reference

Description

Part Number - Manufacturer

C37

330 µF Capacitor Tantalum D_SIZE 6.3 V 45 mΩ

T520D337M006ATE045 - KEMET

C41

47 µF Capacitor Aluminum 0810 50 V

MAL215371479E3 - Vishay

C43

10 µF Capacitor Ceramic X7R 5750 15% 50 V

C5750X7R1H106MB - TDK

C44

10 nF Capacitor Ceramic X7R 0402 10% 16 V

GRM155R71C103KA01 - Murata

C46

680 pF Capacitor Ceramic X7R 0402 10% 16 V

GRM155R71H681KA01 - Murata

C47

10 nF Capacitor Ceramic X7R 0402 10% 16 V

GRM155R71C103KA01 - Murata

C49

470 nF Capacitor Ceramic X7R 0603 10% 25 V

GRM188R71E474KA12 - Murata

C51

22 µF Capacitor Ceramic X5R 1210 10% 25 V

GRM32ER61E226KE15 - Murata

C61

22 pF Capacitor Ceramic COG 0402 5% 25 V

GRM1555C1H220JZ01 - Murata

Schottky Diode 40V 3 A

MBRA340T3G - ON Semiconductor

10 µH Inductor 744066100 30% 3.6 A

744066100 - Wurth Electronics

1 µH Inductor 7445601 20% 8.6 A

7445601 - Wurth Electronics

R56

470 kΩ Resistor 0402 5% 0.1 W

2322-705-87474-L - Yageo

R58

15 kΩ Resistor 0402 5% 0.1 W

2322-705-87153-L - Yageo

R60

33 kΩ Resistor 0402 5% 0.1 W

2322-705-87333-L - Yageo

R65

390 kΩ Resistor 0402 1% 0.063 W

RC0402FR-07390KL - Yageo

R66

100 kΩ Resistor 0402 5% 0.1 W

2322-705-70104-L - Yageo

U12

Step Down Regulator MSOP10 3.5 A 2.4 MHz

LT3972IMSE#PBF - Linear Technology

Table 3: Suggested components for the VCC voltage supply application circuit using a step-down regulator

If another step-down switching regulator is used, the switching frequency must be set to 1 MHz or upper values

to avoid a degradation of the RF modulation spectrum performance.

An LDO linear voltage regulator can be used to supply the module. Ensure proper power dissipation on the

regulator in order to avoid reaching LDO thermal limits during the high current peak generated by the module

during a GSM transmit burst.

1.5.2.1 Current consumption profiles

During operation, the current drawn by the LEON-G100/G200 through the VCC pin can vary by some orders of

magnitude. This ranges from the high peak of current consumption during the GSM transmitting bursts at

maximum power level in connected mode, to the low current consumption during power saving in idle mode.

1.5.2.1.1 Connected-mode

When a GSM call is established, the battery is discharged at a rate determined by the current consumption

profile typical of the GSM transmitting and receiving bursts.

The peak of current consumption during a transmission slot is strictly dependent on the transmitted power,

which is regulated by the network. If the module is transmitting in GSM talk mode in the GSM 850 or in the

EGSM 900 band at the maximum RF power control level 5 (that is approximately 2 W or 33 dBm), the battery

discharge current is modulated at up to 2500 mA (worst case value) with pulses of 576.9 µs (width of 1

slot/burst) that occur every 4.615 ms (width of 1 frame = 8 slots) according to GSM TDMA.

During a GSM call, current consumption is about 100 mA in receiving or in monitor bursts and is about 30-50

mA in the inactive unused bursts (low current period). The more relevant contribution to determine the average

current consumption is set by the transmitted power in the transmit slot.

An example of current consumption profile of the data module in GSM talk mode is shown in Figure 6.

1 2 ... 14 15 16 17 18 19 20 21 22 23 24 ... 74 75

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